ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,744, issued on Nov. 4, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).
"Low leakage Schottky diode" was invented by Manoj Mehrotra (Plano, Texas).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming first and second trenches in a semiconductor substrate. The method further includes filling the first and second trenches with polysilicon. The polysilicon is oppositely doped from the semiconductor substrate. A Schottky contact is formed on the semiconductor substrate between the first and second trenches. The method also includes forming an anode for the Schottky contact. The anode is coupled to the polysilicon in the first and secon...