US Patent Issued to TEXAS INSTRUMENTS on Nov. 25 for "Polysilicon resistor implant for reduced resistance temperature coefficient variability" (Texas Inventor)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,236, issued on Nov. 25, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).

"Polysilicon resistor implant for reduced resistance temperature coefficient variability" was invented by Mahalingam Nandakumar (Richardson, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods and semiconductor circuits are described in which a polysilicon resistor body is formed over a semiconductor substrate. A first dopant species is implanted into the polysilicon resistor body at a first angle about parallel to a surface normal of a topmost surface of the polysilicon resistor body. A second dopant species is implanted into the polysilicon resistor body at a second ...