ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,474,421, issued on Nov. 18, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).
"Hall effect sensor with reduced JFET effect" was invented by Charles Parkhurst (Murphy, Texas), Gabriel Eugenio De La Cruz Hernandez (Richardson, Texas), Keith Ryan Green (Prosper, Texas), Dimitar Trifonov (Vail, Ariz.) and Chao-Hsuian Tsay (Tucson, Ariz.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A Hall effect sensor including a Hall element disposed at a surface of a semiconductor body, including a first doped region of a first conductivity type disposed over and abutted by an isolated second doped region of a second conductivity type. First through fourth terminals of t...