US Patent Issued to TEXAS INSTRUMENTS on May 27 for "Semiconductor device with low noise transistor and low temperature coefficient resistor" (Texas Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,583, issued on May 27, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).

"Semiconductor device with low noise transistor and low temperature coefficient resistor" was invented by Mahalingam Nandakumar (Richardson, Texas) and Yanbiao Pan (Plano, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a resistor having a resistor body including polysilicon, with fluorine in the polysilicon. The resistor body has a laterally alternating distribution of silicon grain sizes. The semiconductor device further includes an MOS transistor having a gate including polysilicon with fluorine. The fluorine in the gate has a higher avera...