US Patent Issued to Texas Instruments on March 4 for "Laterally diffused metal-oxide semiconductor (LDMOS) transistor with integrated back-gate" (California, Texas Inventors)

ALEXANDRIA, Va., March 5 -- United States Patent no. 12,243,939, issued on March 4, was assigned to Texas Instruments Inc. (Dallas).

"Laterally diffused metal-oxide semiconductor (LDMOS) transistor with integrated back-gate" was invented by Gang Xue (San Jose, Calif.), Pushpa Mahalingam (Richardson, Texas) and Alexei Sadovnikov (Sunnyvale, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Described examples include an integrated circuit having a transistor with a first gate on a first gate insulating layer. The transistor also has second gate separated from the first gate by a gate gap. The integrated circuit also includes a channel well at the gate gap extending under the first gate and the second gate....