US Patent Issued to Texas Instruments on June 3 for "Implant blocking for a trench or FinFET without an additional mask" (Texas Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,176, issued on June 3, was assigned to Texas Instruments Inc. (Dallas).

"Implant blocking for a trench or FinFET without an additional mask" was invented by Ming-Yeh Chuang (McKinney, Texas) and Abbas Ali (Plano, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating an integrated circuit includes forming and patterning a hardmask over a substrate such that the patterned hardmask exposes regions of the substrate. The exposed regions are etched, thereby forming trenches and a semiconductor fin between the trenches. Prior to removing the hardmask, a photoresist layer is formed and patterned, thereby exposing a section of the semic...