US Patent Issued to Texas Instruments on June 17 for "Ultra-low leakage diodes used for low input bias current" (Arizona, Texas Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,297, issued on June 17, was assigned to Texas Instruments Inc. (Dallas).

"Ultra-low leakage diodes used for low input bias current" was invented by Siva Kumar Sudani (Tucson, Ariz.), Jerry L. Doorenbos (Tucson, Ariz.), YuGuo Wang (Dallas), Srinivas Kumar Pulijala (Tucson, Ariz.) and Bharath Karthik Vasan (Tucson, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an example, a device includes a semiconductor substrate having a top surface. The device also includes a P-doped well formed in the semiconductor substrate and extending downwardly from the top surface. The device includes a cathode of a diode formed by an N-doped region in the P-doped...