US Patent Issued to TEXAS INSTRUMENTS on June 17 for "Fin field-effect transistor (FinFET) with a high-K material field-plating" (Texas Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,277, issued on June 17, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).

"Fin field-effect transistor (FinFET) with a high-K material field-plating" was invented by Ming-Yeh Chuang (McKinney, Texas) and Umamaheswari Aghoram (Richardson, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "One example includes an integrated circuit (IC) comprising a fin field effect transistor (FinFET). The FinFET includes a substrate with a fin extending from a surface of the substrate. The fin includes a source region, a drain region, and a drift region adjacent the drain region. The fin also includes a field-plating (FP) dielectric layer on a first side, a second ...