ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,299, issued on June 17, was assigned to Texas Instruments Inc. (Dallas).

"Electrostatic discharge guard ring with snapback protection" was invented by Sunglyong Kim (Allen, Texas), David LaFonteese (Redwood City, Calif.), Seetharaman Sridhar (Richardson, Texas) and Sameer Pendharkar (Allen, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "An electrostatic discharge (ESD) protection structure that provides snapback protections to one or more high voltage circuit components. The ESD protection structure can be integrated along a peripheral region of a high voltage circuit, such as a high side gate driver of a driver circuit. The ESD protection str...