ALEXANDRIA, Va., June 18 -- United States Patent no. 12,327,829, issued on June 10, was assigned to Texas Instruments Inc. (Dallas).
"Rugged LDMOS with field plate" was invented by Clint Alan Naquin (Plano, Texas), Henry Litzmann Edwards (Garland, Texas) and Alexei Sadovnikov (Sunnyvale, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A microelectronic device including a substrate having a semiconductor material containing a laterally diffused metal oxide semiconductor (LDMOS) transistor, including a body region of a first conductivity type and a drift region of an opposite conductivity type. A gate dielectric layer over a channel region of the body, the gate dielectric extending over a junction betwee...