US Patent Issued to TEXAS INSTRUMENTS on July 8 for "Method of reducing integrated deep trench optically sensitive defectivity" (Texas Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,354,904, issued on July 8, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).

"Method of reducing integrated deep trench optically sensitive defectivity" was invented by Abbas Ali (Plano, Texas) and Scott Hiemke (McKinney, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "A microelectronic device includes an integrated deep trench in a substrate, with a field oxide layer on the substrate. The integrated deep trench includes a of deep trench extending into semiconductor material of the substrate, a deep trench sidewall dielectric layer contacting the substrate and an electrically conductive trench-fill material contacting the deep trench sidewall dielect...