US Patent Issued to TEXAS INSTRUMENTS on July 15 for "Vertical deep trench and deep trench island based deep n-type well diode and diode triggered protection device" (Texas, California Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,926, issued on July 15, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).

"Vertical deep trench and deep trench island based deep n-type well diode and diode triggered protection device" was invented by Umamaheswari Aghoram (Richardson, Texas), Akram Ali Salman (Plano, Texas), Binghua Hu (Plano, Texas) and Alexei Sadovnikov (Sunnyvale, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device which includes two or more integrated deep trench features configured as a Zener diode. The Zener diode includes a plurality of deep trenches extending into semiconductor material of the substrate and a dielectric deep trench liner that includ...