US Patent Issued to TEXAS INSTRUMENTS on Jan. 28 for "Semiconductor doped region with biased isolated members" (California, South Carolina Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,807, issued on Jan. 28, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).

"Semiconductor doped region with biased isolated members" was invented by Alexei Sadovnikov (Sunnyvale, Calif.), Sheldon Douglas Haynie (Myrtle Beach, S.C.) and Ujwal Radhakrishna (Sunnyvale, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A microelectronic device includes a doped region of semiconductor material having a first region and an opposite second region. The microelectronic device is configured to provide a first operational potential at the first region and to provide a second operational potential at the second region. The microelectronic device includes fiel...