US Patent Issued to Texas Instruments on Jan. 28 for "Cell architecture with extended transistor geometry" (Indian Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,850, issued on Jan. 28, was assigned to Texas Instruments Inc. (Dallas).

"Cell architecture with extended transistor geometry" was invented by Rakesh Dimri (Bengaluru, India), Badarish Mohan Subbannavar (Bengaluru, India) and Somasekar J (Bengaluru, India).

According to the abstract* released by the U.S. Patent & Trademark Office: "An IC includes first-third power rails over a semiconductor substrate. The first rail has a first polarity different from the second and third rails. The IC includes multiple first cells on the semiconductor substrate in first and second rows. The first row is separated from the second row by the first power rail. Each first cell includes a first heigh...