ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,726, issued on Jan. 27, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).
"Metallization in integrated circuits" was invented by Frances Ooi (Dallas).
According to the abstract* released by the U.S. Patent & Trademark Office: "Described examples include a method for forming an integrated circuit, the method including depositing a metal layer including aluminum and copper over a semiconductor substrate and forming a patterned photoresist layer over the metal layer. The method also including etching the metal layer to produce a patterned metal layer and ashing the patterned photoresist layer in a plasma provided in a process chamber sourced with a gas flow having an N2/O2 ratio of a...