US Patent Issued to TEXAS INSTRUMENTS on Jan. 20 for "Transistor with buffer structure having carbon doped profile" (Texas Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,493, issued on Jan. 20, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).

"Transistor with buffer structure having carbon doped profile" was invented by Nicholas Stephen Dellas (Dallas), Dong Seup Lee (McKinney, Texas) and Andinet Tefera Desalegn (Dallas).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a described example, an integrated circuit (IC) is disclosed that includes a transistor. The transistor includes a substrate, and a buffer structure overlying the substrate. The buffer structure has a first buffer layer, a second buffer layer overlying the first buffer layer, and a third buffer layer overlying the second buffer layer. The first buffer...