US Patent Issued to TEXAS INSTRUMENTS on Jan. 13 for "Transistors with dual wells" (Texas Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,024, issued on Jan. 13, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).

"Transistors with dual wells" was invented by Xiang-Zheng Bo (Plano, Texas), Michelle N. Nguyen (Allen, Texas) and Douglas T. Grider (McKinney, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "In some examples, a transistor includes a semiconductor layer having a first conductivity type and a first dopant concentration. A gate dielectric layer is between a gate electrode and the semiconductor layer. A first source/drain region is adjacent a first sidewall of the gate electrode and a second source/drain region is adjacent an opposite second sidewall of the gate electrode, th...