ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,218,188, issued on Feb. 4, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).
"Deep trench intersections" was invented by Binghua Hu (Plano, Texas), Ye Shao (Plano, Texas) and John K Arch (Richardson, Texas).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device has a deep trench in a semiconductor substrate of the semiconductor device, with linear trench segments extending to a trench intersection. Adjacent linear trench segments are connected by connector trench segments that surround a substrate pillar in the trench intersection. Each connector trench segment has a width at least as great as widths of the linear trench segments connected b...