ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,332, issued on Feb. 17, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).
"Three-dimensional transistor device having conformal layer" was invented by Sheldon Douglas Haynie (Myrtle Beach, S.C.) and Scott Summerfelt (Garland, Texas).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor substrate including a corrugated surface. A body has a first conductivity type and includes a portion extending continuously along the corrugated surface. A gate dielectric layer is on the body and extends continuously along the corrugated surface. A gate is on the gate dielectric layer, the gate extending continuously along the ...