ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,366, issued on Feb. 10, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).
"Rugged LDMOS with reduced NSD in source" was invented by Henry Litzmann Edwards (Garland, Texas).
According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit has a P-type substrate and an N-type LDMOS transistor. The LDMOS transistor includes a boron-doped diffused well (DWELL-B) and an arsenic-doped diffused well (DWELL-As) located within the DWELL-B. A first polysilicon gate having first sidewall spacers and a second polysilicon gate having second sidewall spacers are located over opposite edges of the DWELL-B. A source/IBG region includes a first source region adjace...