US Patent Issued to TEXAS INSTRUMENTS on Dec. 9 for "Integration scheme to build resistor, capacitor, efuse using silicon-rich dielectric layer as a base dielectric" (Texas Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,494,425, issued on Dec. 9, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).

"Integration scheme to build resistor, capacitor, efuse using silicon-rich dielectric layer as a base dielectric" was invented by Mahalingam Nandakumar (Richardson, Texas), Yuguo Wang (Plano, Texas) and Haowen Bu (Wylie, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method and an electronic device that includes an isolation structure having a dielectric material on or in a semiconductor surface layer, and a passive circuit component having a metal silicide structure on a side of the isolation structure, there the metal silicide structure includes a metal silicide portion...