US Patent Issued to TEXAS INSTRUMENTS on Dec. 30 for "Reduced silicon dislocation defects from deep SI trench integration" (Texas Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,974, issued on Dec. 30, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).

"Reduced silicon dislocation defects from deep SI trench integration" was invented by Abbas Ali (Plano, Texas), Rajni J. Aggarwal (Garland, Texas) and Steven J Adler (Plano, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit includes a bipolar transistor extending into a [100] surface of a semiconductor substrate having a crystalline lattice. A deep trench surrounds the bipolar transistor and has a path having a plurality of sides. At least one side extends in a direction parallel to a greater than100less than axis of the crystalline lattice."

The paten...