US Patent Issued to TEXAS INSTRUMENTS on Dec. 30 for "Back end of line structure for improved current density in HR devices" (North Carolina, Texas Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,406, issued on Dec. 30, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).

"Back end of line structure for improved current density in HR devices" was invented by William Harrison (Apex, N.C.), Sylvester Ankamah-Kusi (Dallas), Yiqi Tang (Allen, Texas) and Rajen M. Murugan (Dallas).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is described herein. The semiconductor device generally includes a metal fabrication layer disposed on a substrate. The semiconductor device generally includes a dielectric layer having a first plurality of vias aligned with a first metallization region of the metal fabrication layer and a second plurality ...