US Patent Issued to TEXAS INSTRUMENTS on Dec. 2 for "Select gate self-aligned patterning in split-gate flash memory cell" (Texas Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,427, issued on Dec. 2, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).

"Select gate self-aligned patterning in split-gate flash memory cell" was invented by Xiangzheng Bo (Plano, Texas), Douglas Tad Grider III (McKinney, Texas) and John Macpeak (Garland, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit includes first and second gate stacks located over a dielectric layer that is in turn disposed over a semiconductor substrate. Each gate stack includes a floating gate located on the dielectric layer and a control gate located over the floating gate. A first select gate electrode is located on a side of the first gate stack a...