US Patent Issued to TEXAS INSTRUMENTS on Dec. 16 for "Shallow trench isolation structure with nitride pullback by implantation treatment" (Texas Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,500,117, issued on Dec. 16, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).

"Shallow trench isolation structure with nitride pullback by implantation treatment" was invented by Mahalingam Nandakumar (Richardson, Texas), Douglas Harvey Newman (Crowley, Texas), Byron Joseph Palla (Murphy, Texas) and Haowen Bu (Lucas, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a trench extending into a semiconductor layer. A liner layer is on a sidewall of the semiconductor layer within the trench. The liner layer extends from the sidewall to a top surface of the semiconductor layer. An isolation structure is within the trench. Th...