ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,633, issued on Dec. 16, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).
"Breakdown diodes and methods of making the same" was invented by Alexei Sadovnikov (Sunnyvale, Calif.), Natalia Lavrovskaya (Sunnyvale, Calif.) and Archana Venugopal (Mountain View, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Breakdown diodes and methods of making the same are described. Such a breakdown diode can be fabricated in a semiconductor substrate and have a junction configured to breakdown under a target reverse bias applied across the junctions. The junction is located below the surface of the substrate by a distance suitable for ameliorating mechanical st...