ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,382,657, issued on Aug. 5, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).
"Transistor device with buffered drain" was invented by Henry Litzmann Edwards (Garland, Texas).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a source region. A drain region has a first conductivity type and a second dopant concentration spaced apart from the source region. A first drift region is located between the source region and the drain region and has the first conductivity type and a first dopant concentration that is lower than the second dopant concentration of the drain region. An oxide structure includes a first portion on or over the ...