ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,382,658, issued on Aug. 5, was assigned to Texas Instruments Inc. (Dallas).

"Reducing transistor breakdown in a power FET current sense stack" was invented by Henry Litzmann Edwards (Garland, Texas), Narayana Sateesh Pillai (Murphy, Texas), Gangqiang Zhang (Plano, Texas) and Angelo William Pereira (Allen, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit includes a first field effect transistor (FET) and a second FET formed in or over a semiconductor substrate and configured to selectively conduct a current between a first circuit node and a second circuit node. The first FET has a first source, a first drain and a first buried l...