ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,381,162, issued on Aug. 5, was assigned to Texas Instruments Inc. (Dallas).
"Process for reducing pattern-induced wafer deformation" was invented by Jonas Hohenberger (Kissing, Germany) and Gernot Biese (Marzling, Germany).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device wafer includes a plurality of device patterns formed in or over a semiconductor substrate, and a scribe area from which the device patterns are excluded. A plurality of dummy features are located in at least one material level in the scribe area, including over laser scribe dots formed in the semiconductor substrate."
The patent was filed on Jan. 13, 2023, under Appl...