ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,394,742, issued on Aug. 19, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).
"Interconnect structure for high power GaN module including a printed planar interconnect line and method for making the same" was invented by Jie Chen (Plano, Texas), Yong Xie (Plano, Texas), Rajen Manicon Murugan (Dallas) and Woochan Kim (San Jose, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "In described examples of a circuit module, a multilayer substrate has a conductive pad formed on a surface of the multilayer substrate. An integrated circuit (IC) die is bonded to the surface of the substrate in dead bug manner, such that a set of bond pads formed on a surface o...