US Patent Issued to TEXAS INSTRUMENTS on Aug. 12 for "Semiconductor devices for high frequency applications" (California Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,642, issued on Aug. 12, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).

"Semiconductor devices for high frequency applications" was invented by Mattias Dahlstrom (Los Altos, Calif.), Joseph De Santis (Gilroy, Calif.) and Jeffrey A. Babcock (Sunnyvale, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices for high frequency operations are described. The semiconductor devices include a substrate with an epitaxial layer. The epitaxial layer has higher resistivity than the substrate and includes a surface facing away from the substrate. The epitaxial layer includes a shallow trench isolation (STI) structure extended to a first dep...