ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,640, issued on Aug. 12, was assigned to Texas Instruments Inc. (Dallas).
"High voltage avalanche diode for active clamp drivers" was invented by Henry Litzmann Edwards (Garland, Texas), Joseph Maurice Khayat (Bedford, N.H.) and Archana Venugopal (Mountain View, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit includes a shallow P-type well (SPW) below a surface of a semiconductor substrate and a shallow N-type well (SNW) below the surface. The SPW forms an anode of a diode and the SNW forms a cathode of the diode. The SNW is spaced apart from the SPW by a well space region; and a thin field relief oxide structure lies over...