ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,290, issued on April 15, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).
"Low resistive source/backgate finFET" was invented by Ming-Yeh Chuang (McKinney, Texas).
According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit including a substrate with a fin extending from a surface of the substrate. The fin includes a source region, a drain region, and a body region. The source region includes an outer region having a first conductivity type complementary to a second conductivity type of an outer region of the body and an interior-positioned conductive region having the second conductivity type."
The patent was filed on Sept. 23, 2021, under A...