US Patent Issued to TetraMem on Nov. 25 for "Methods for fabricating RRAM crossbar array circuits with specialized interface layers for low current operation" (California, Massachusetts Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,462, issued on Nov. 25, was assigned to TetraMem Inc. (San Jose, Calif.).

"Methods for fabricating RRAM crossbar array circuits with specialized interface layers for low current operation" was invented by Minxian Zhang (Amherst, Mass.) and Ning Ge (Danville, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Technologies relating to RRAM crossbar array circuits with specialized interface layers for the low current operations are disclosed. An example apparatus includes: a substrate; a bottom electrode formed on the substrate; a first layer formed on the bottom electrode; an RRAM oxide layer formed on the first layer and the bottom electrode; and ...