US Patent Issued to TetraMem on Nov. 18 for "CMOS-compatible resistive random-access memory devices with a via device structure" (California, Massachusetts Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,963, issued on Nov. 18, was assigned to TetraMem Inc. (San Jose, Calif.).

"CMOS-compatible resistive random-access memory devices with a via device structure" was invented by Mingche Wu (San Jose, Calif.), Minxian Zhang (Amherst, Mass.) and Ning Ge (Danville, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A crossbar circuit including a crossbar array and a periphery circuit is provided. A resistive random-access memory (RRAM) device of the crossbar array includes a bottom electrode fabricated on a first interconnect layer; a top electrode; and a filament-forming layer fabricated between the bottom electrode and the top electrode. A portion of...