ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,298, issued on Nov. 11, was assigned to TetraMem Inc. (San Jose, Calif.).
"Ferroelectric non-volatile memory devices" was invented by Minxian Zhang (Amherst, Mass.) and Ning Ge (Danville, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "In accordance with some embodiments of the present disclosure, a memory device is provided. The memory may include a ferroelectric layer including a ferroelectric material interstitially doped with at least one interstitial dopant. The ferroelectric material may include a metal oxide. The interstitial dopant may include an element having an atomic radius that is not greater than an atomic radius of a metal eleme...