US Patent Issued to TetraMem on May 13 for "Resistive random-access memory devices with multi-component electrodes" (California, Massachusetts Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,768, issued on May 13, was assigned to TetraMem Inc. (Fremont, Calif.).

"Resistive random-access memory devices with multi-component electrodes" was invented by Minxian Zhang (Amherst, Mass.) and Ning Ge (Danville, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to resistive random-access memory (RRAM) devices. In some embodiments, a RRAM device may include a first electrode; a second electrode comprising an alloy containing tantalum; and a switching oxide layer positioned between the first electrode and the second electrode, wherein the switching oxide layer includes at least one transition metal oxide. The allo...