US Patent Issued to TetraMem on Jan. 13 for "Read-out circuits for RRAM-based crossbar circuits" (California Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,290, issued on Jan. 13, was assigned to TetraMem Inc. (San Jose, Calif.).

"Read-out circuits for RRAM-based crossbar circuits" was invented by Hengfang Zhu (Fremont, Calif.), Wenbo Yin (Alameda, Calif.) and Ning Ge (Danville, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides read-out circuits for crossbar circuits. A crossbar circuit may include a plurality of bit lines intersecting with a plurality of word lines and a plurality of cross-point devices. Each of the plurality of cross-point devices is connected to at least one of the plurality of word lines and at least one of the plurality of bit lines. The crossba...