US Patent Issued to TetraMem on Feb. 3 for "Resistive random-access memory devices with metal-nitride compound electrodes" (California, Massachusetts Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,514, issued on Feb. 3, was assigned to TetraMem Inc. (San Jose, Calif.).

"Resistive random-access memory devices with metal-nitride compound electrodes" was invented by Minxian Zhang (Amherst, Mass.), Mingche Wu (Newark, Calif.) and Ning Ge (Danville, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to resistive random-access memory (RRAM) devices. In some embodiments, an RRAM device includes: a first electrode including a metal nitride; a second electrode comprising a first conductive material; and a switching oxide layer positioned between the first electrode and the second electrode. The switching oxide layer in...