US Patent Issued to TetraMem on Aug. 5 for "Resistive random-access memory devices with multi-component electrodes and discontinuous interface layers" (California Inventors)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,382,847, issued on Aug. 5, was assigned to TetraMem Inc. (San Jose, Calif.).

"Resistive random-access memory devices with multi-component electrodes and discontinuous interface layers" was invented by Minxian Zhang (Newark, Calif.) and Ning Ge (Newark, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to resistive random-access memory (RRAM) devices. An RRAM device may include a first electrode, a first interface layer fabricated on the first electrode; a switching oxide layer fabricated on the first interface layer; and a second electrode fabricated on the switching oxide layer. The switching oxide layer includes a tra...