US Patent Issued to TetraMem on Aug. 19 for "Resistive random-access memory devices with engineered electronic defects and methods for making the same" (California, Massachusetts Inventors)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,375, issued on Aug. 19, was assigned to TetraMem Inc. (San Jose, Calif.).

"Resistive random-access memory devices with engineered electronic defects and methods for making the same" was invented by Minxian Zhang (Amherst, Mass.) and Ning Ge (Danville, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to resistive random-access memory (RRAM) devices. A method for fabricating resistive random-access memory (RRAM) device may include fabricating, on a first electrode of the RRAM device, a first interface layer comprising a first discontinuous film of a first material; fabricating, on the first interface layer, a switch...