US Patent Issued to Tessera Advanced Technologies on April 15 for "Multilayer interconnect structure and method for integrated circuits" (New York Inventor)

ALEXANDRIA, Va., June 5 -- United States Patent no. RE50,384, issued on April 15, was assigned to Tessera Advanced Technologies Inc. (San Jose, Calif.).

"Multilayer interconnect structure and method for integrated circuits" was invented by Ryoung-Han Kim (Clifton Park, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A multilayer interconnect structure is formed by, providing a substrate having thereon a first dielectric for supporting a multi-layer interconnection having lower conductor MN, upper conductor MN+1, dielectric interlayer (DIL) and interconnecting via conductor VN+1/N. The lower conductor MN has a first upper surface located in a recess below a second upper surface of the first dielectric. Th...