ALEXANDRIA, Va., June 16 -- United States Patent no. 12,308,214, issued on May 20, was assigned to TES Co. LTD (Yongin-si, South Korea).
"Method of processing substrate" was invented by Bong-Soo Kwon (Yongin-si, South Korea), Se-Woong Bae (Yongin-si, South Korea) and Eun-Jin Song (Yongin-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a method of processing a substrate comprising an ONO stack in which a silicon oxide layer and a silicon nitride layer are stacked alternately and repeatedly on the substrate. The method includes: (a) primarily dry-etching silicon nitride layers of the ONO stack; (b) producing oxygen radicals and processing silicon oxide layers of the ONO stack w...