ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,328, issued on Dec. 30, was assigned to TES Co. LTD (Yongin-si, South Korea).
"Method of processing substrate" was invented by Bong-Soo Kwon (Yongin-si, South Korea) and Se-Chan Kim (Yongin-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of processing a substrate on which films comprising a first silicon oxide film, a silicon nitride film and a second silicon oxide film are stacked from an outermost side, includes: a first etching step of etching the first silicon oxide film; and a second etching step of etching the silicon nitride film and the second silicon oxide film. In the first etching step, a residual layer of the firs...