US Patent Issued to TERANERGY TECHNOLOGY on Sept. 16 for "Ultrathin silicon oxynitride interface material, tunnel oxide passivated structure and preparation methods and applications thereof" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,136, issued on Sept. 16, was assigned to TERANERGY TECHNOLOGY Co. LTD. (Ningbo, China).

"Ultrathin silicon oxynitride interface material, tunnel oxide passivated structure and preparation methods and applications thereof" was invented by Jichun Ye (Ningbo, China), Yuheng Zeng (Ningbo, China), Haiyang Xing (Ningbo, China), Dian Ma (Ningbo, China), Wei Liu (Ningbo, China), Baojie Yan (Ningbo, China) and Mingdun Liao (Ningbo, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An ultrathin silicon oxynitride interface material, a tunnel oxide passivated structure and preparation methods and applications thereof are provided. The ultrathin silicon oxy...