US Patent Issued to TDK on Nov. 4 for "Magnetization rotational element, magnetoresistive effect element, and magnetic memory" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,959, issued on Nov. 4, was assigned to TDK Corp. (Tokyo).

"Magnetization rotational element, magnetoresistive effect element, and magnetic memory" was invented by Kosuke Hamanaka (Tokyo), Yohei Shiokawa (Tokyo) and Minoru Sanuki (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "This magnetization rotational element includes a spin-orbit torque wiring, and a first ferromagnetic layer in contact with the spin-orbit torque wiring, in which the spin-orbit torque wiring includes a first layer, a second layer, and a third layer in order from a side closer to the first ferromagnetic layer, and a coefficient of linear expansion of a material forming the ...