US Patent Issued to TDK on July 15 for "Magnetization rotational element, magnetoresistance effect element, and magnetic memory" (Japanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,364,166, issued on July 15, was assigned to TDK Corp. (Tokyo).

"Magnetization rotational element, magnetoresistance effect element, and magnetic memory" was invented by Eiji Komura (Tokyo) and Yohei Shiokawa (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "This magnetization rotational element includes a spin injection region that extends in a first direction, a first ferromagnetic layer that is laminated on the spin injection region, and a metal region that is adjacent to the spin injection region with an insulator interposed therebetween in a second direction orthogonal to the first direction in a plan view in a lamination direction."

The patent...