ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,536,423, issued on Jan. 27, was assigned to TDK Corp. (Tokyo).
"Memristor and neuromorphic device" was invented by Shogo Yamada (Tokyo), Keita Suda (Tokyo), Yukio Terasaki (Tokyo) and Tomoyuki Sasaki (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memristor includes a first variable conductance element and a second variable conductance element. A minimum value of conductance of the second variable conductance element during reading is larger than a maximum value of conductance of the first variable conductance element during reading. In the memristor, a first read path when the conductance of the first variable conductance element is read merges...