US Patent Issued to TDK on Jan. 27 for "Magnetoresistive effect element and crystallization method of ferromagnetic layer" (Japanese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,712, issued on Jan. 27, was assigned to TDK Corp. (Tokyo).

"Magnetoresistive effect element and crystallization method of ferromagnetic layer" was invented by Shinto Ichikawa (Tokyo), Kazuumi Inubushi (Tokyo) and Katsuyuki Nakada (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetoresistive effect element includes a first ferromagnetic layer, a second ferromagnetic layer, a non-magnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, and an additive-containing layer disposed at any position in a laminating direction, at least one of the first ferromagnetic layer and the second ferromagnetic layer i...