US Patent Issued to TDK on Dec. 23 for "Magnetoresistance effect element with layers containing crystallized Co Heusler alloy" (Japanese Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,598, issued on Dec. 23, was assigned to TDK Corp. (Tokyo).

"Magnetoresistance effect element with layers containing crystallized Co Heusler alloy" was invented by Shinto Ichikawa (Tokyo), Kazuumi Inubushi (Tokyo) and Katsuyuki Nakada (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetoresistance effect element includes: a first ferromagnetic layer, a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein at least one of the first ferromagnetic layer and the second ferromagnetic layer includes a first layer and a second layer in order from the side clo...